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Room-Temperature Visible Electroluminescence From Aluminum Nitride Thin Film Embedded With Aluminum Nanocrystals Yang, M. Chen, T. P. Liu, Y. Ding, L. Wong, J. I. Liu, Z. Zhang, S. Zhang, W. L. Zhu, F. This paper appears in: Electron Devices, IEEE Transactions on Publication Date: Dec. 2008 Volume: 55, Issue: 12 On page(s): 3605-3609 ISSN: 0018-9383 Digital Object Identifier: 10.1109/TED.2008.2006531 Current Version Published: 2008-11-21

Abstract In this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.